[2061PC Stock]
- Nimewo Pati:
- RN2970FE(TE85L,F)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- TRANS 2PNP PREBIAS 0.1W ES6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage RN2970FE(TE85L,F) electronic components. RN2970FE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2970FE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN2970FE(TE85L,F) Atribi pwodwi yo
Nimewo Pati :
RN2970FE(TE85L,F)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
TRANS 2PNP PREBIAS 0.1W ES6
Seri :
-
Estati Pati :
Obsolete
Kalite tranzistò :
2 PNP - Pre-Biased (Dual)
Kouran - Pèseptè (Ic) (Max) :
100mA
Voltage - Pèseptè ki emèt deba (Max) :
50V
Rezistans - Sèvi (R1) :
4.7 kOhms
Rezistans - Sèvi ak emeteur (R2) :
10 kOhms
DC Kouran Akeri (HFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Kouran - Cutoff Pèseptè (Max) :
100nA (ICBO)
Frekans - Tranzisyon :
200MHz
Pouvwa - Max :
100mW
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-563, SOT-666
Pake Aparèy Founisè :
ES6
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