Diodes Incorporated - DDTB123YC-7-F

KEY Part #: K6527322

DDTB123YC-7-F Pricing (USD) [1903162PC Stock]

  • 1 pcs$0.01943
  • 3,000 pcs$0.01801

Nimewo Pati:
DDTB123YC-7-F
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
TRANS PREBIAS PNP 200MW SOT23-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur and Diodes - RF ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DDTB123YC-7-F electronic components. DDTB123YC-7-F can be shipped within 24 hours after order. If you have any demands for DDTB123YC-7-F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DDTB123YC-7-F Atribi pwodwi yo

Nimewo Pati : DDTB123YC-7-F
Manifakti : Diodes Incorporated
Deskripsyon : TRANS PREBIAS PNP 200MW SOT23-3
Seri : -
Estati Pati : Active
Kalite tranzistò : PNP - Pre-Biased
Kouran - Pèseptè (Ic) (Max) : 500mA
Voltage - Pèseptè ki emèt deba (Max) : 50V
Rezistans - Sèvi (R1) : 2.2 kOhms
Rezistans - Sèvi ak emeteur (R2) : 10 kOhms
DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 56 @ 50mA, 5V
Vce saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Kouran - Cutoff Pèseptè (Max) : 500nA
Frekans - Tranzisyon : 200MHz
Pouvwa - Max : 200mW
Mounting Kalite : Surface Mount
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè : SOT-23-3

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