Nimewo Pati :
MBRM110ET3G
Manifakti :
ON Semiconductor
Deskripsyon :
DIODE SCHOTTKY 10V 1A POWERMITE
Voltage - DC Ranvèse (Vr) (Max) :
10V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
530mV @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
1µA @ 10V
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Powermite
Operating Tanperati - Junction :
-55°C ~ 150°C