ON Semiconductor - MBRM110ET3G

KEY Part #: K6424997

MBRM110ET3G Pricing (USD) [1012464PC Stock]

  • 1 pcs$0.03653
  • 12,000 pcs$0.03643

Nimewo Pati:
MBRM110ET3G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
DIODE SCHOTTKY 10V 1A POWERMITE. Schottky Diodes & Rectifiers 1A 10V Low Leakage
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor MBRM110ET3G electronic components. MBRM110ET3G can be shipped within 24 hours after order. If you have any demands for MBRM110ET3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MBRM110ET3G Atribi pwodwi yo

Nimewo Pati : MBRM110ET3G
Manifakti : ON Semiconductor
Deskripsyon : DIODE SCHOTTKY 10V 1A POWERMITE
Seri : -
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 10V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 530mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 1µA @ 10V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-216AA
Pake Aparèy Founisè : Powermite
Operating Tanperati - Junction : -55°C ~ 150°C