Vishay Semiconductor Diodes Division - VS-GB75TP120U

KEY Part #: K6533278

VS-GB75TP120U Pricing (USD) [1099PC Stock]

  • 1 pcs$39.39981
  • 24 pcs$37.52363

Nimewo Pati:
VS-GB75TP120U
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
IGBT 1200V 105A 500W INT-A-PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - JFETs, Diodes - RF, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-GB75TP120U electronic components. VS-GB75TP120U can be shipped within 24 hours after order. If you have any demands for VS-GB75TP120U, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB75TP120U Atribi pwodwi yo

Nimewo Pati : VS-GB75TP120U
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : IGBT 1200V 105A 500W INT-A-PAK
Seri : -
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : Half Bridge
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 105A
Pouvwa - Max : 500W
Vce (sou) (Max) @ Vge, Ic : 3.2V @ 15V, 75A (Typ)
Kouran - Cutoff Pèseptè (Max) : 2mA
Antre kapasite (Cies) @ Vce : 4.3nF @ 30V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : INT-A-PAK (3 + 4)
Pake Aparèy Founisè : INT-A-PAK

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