TH58BYG2S3HBAI6 Pricing (USD) [16879PC Stock]
- 1 pcs$2.25638
- 10 pcs$2.04661
- 25 pcs$2.00236
- 50 pcs$1.99126
- Nimewo Pati:
- TH58BYG2S3HBAI6
- Manifakti:
- Toshiba Memory America, Inc.
- Detaye deskripsyon:
- IC FLASH 4G PARALLEL 67VFBGA. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Lineyè - multiplikatè analog, divizeur, Lojik - Translators, Level Shifters, PMIC - contrôles cho echanj, PMIC - Power Supply Controller, Monitè, IC espesyalize yo, PMIC - Display Chofè, Lineyè - Videyo Processing and Lojik - Tanpon, chofè, resèpteur, resèpteur ...
- Avantaj konpetitif:
- We specialize in Toshiba Memory America, Inc. TH58BYG2S3HBAI6 electronic components. TH58BYG2S3HBAI6 can be shipped within 24 hours after order. If you have any demands for TH58BYG2S3HBAI6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TH58BYG2S3HBAI6 Atribi pwodwi yo
Nimewo Pati :
TH58BYG2S3HBAI6
Manifakti :
Toshiba Memory America, Inc.
Deskripsyon :
IC FLASH 4G PARALLEL 67VFBGA
Seri :
Benand™
Estati Pati :
Active
Kalite memwa yo :
Non-Volatile
Fòma memwa :
FLASH
Teknoloji :
FLASH - NAND (SLC)
Size memwa :
4Gb (512M x 8)
Frè frekans lan :
-
Ekri Sik Tan - Pawòl, Page :
25ns
Tan aksè :
25ns
Entèfas memwa :
Parallel
Voltage - Pwovizyon pou :
1.7V ~ 1.95V
Operating Tanperati :
-40°C ~ 85°C (TA)
Mounting Kalite :
Surface Mount
Pake / Ka :
67-VFBGA
Pake Aparèy Founisè :
67-VFBGA (6.5x8)
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IC FLASH 4G PARALLEL 67VFBGA. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
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