Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GP 1KV 6A MICRODE BUTTON
Voltage - DC Ranvèse (Vr) (Max) :
1000V
Kouran - Mwayèn Rèktifye (Io) :
6A
Voltage - Forward (Vf) (Max) @ Si :
900mV @ 6A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
25µA @ 1000V
Mounting Kalite :
Through Hole
Pake / Ka :
Button, Axial
Pake Aparèy Founisè :
Microde Button
Operating Tanperati - Junction :
-65°C ~ 175°C