Microsemi Corporation - JAN1N5809

KEY Part #: K6427673

JAN1N5809 Pricing (USD) [9417PC Stock]

  • 1 pcs$4.37602
  • 100 pcs$4.28537

Nimewo Pati:
JAN1N5809
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
DIODE GEN PURP 100V 6A AXIAL. Rectifiers Rectifier
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5809 Atribi pwodwi yo

Nimewo Pati : JAN1N5809
Manifakti : Microsemi Corporation
Deskripsyon : DIODE GEN PURP 100V 6A AXIAL
Seri : Military, MIL-PRF-19500/477
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 6A
Voltage - Forward (Vf) (Max) @ Si : 875mV @ 4A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 30ns
Kouran - Fèy Reverse @ Vr : 5µA @ 100V
Kapasite @ Vr, F : 60pF @ 10V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : B, Axial
Pake Aparèy Founisè : -
Operating Tanperati - Junction : -65°C ~ 175°C

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