Nimewo Pati :
GI858-E3/54
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 800V 3A DO201AD
Voltage - DC Ranvèse (Vr) (Max) :
800V
Kouran - Mwayèn Rèktifye (Io) :
3A
Voltage - Forward (Vf) (Max) @ Si :
1.25V @ 3A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
200ns
Kouran - Fèy Reverse @ Vr :
10µA @ 800V
Kapasite @ Vr, F :
28pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-201AD, Axial
Pake Aparèy Founisè :
DO-201AD
Operating Tanperati - Junction :
-50°C ~ 150°C