Nimewo Pati :
ISL9R8120P2
Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 1.2KV 8A TO220-2L
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
3.3V @ 8A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
300ns
Kouran - Fèy Reverse @ Vr :
100µA @ 1200V
Kapasite @ Vr, F :
30pF @ 10V, 1MHz
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-2L
Operating Tanperati - Junction :
-55°C ~ 150°C