Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE GEN PURP 100V 16A DO4
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
16A
Voltage - Forward (Vf) (Max) @ Si :
900mV @ 16A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
200ns
Kouran - Fèy Reverse @ Vr :
25µA @ 100V
Mounting Kalite :
Chassis, Stud Mount
Pake / Ka :
DO-203AA, DO-4, Stud
Pake Aparèy Founisè :
DO-4
Operating Tanperati - Junction :
-65°C ~ 150°C