Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 600V 50A TO247
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
50A
Voltage - Forward (Vf) (Max) @ Si :
1.6V @ 50A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
75ns
Kouran - Fèy Reverse @ Vr :
250µA @ 600V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-2
Operating Tanperati - Junction :
-65°C ~ 175°C