Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
OPTOISO 5KV DARL W/BASE 6DIP
Voltage - Izolasyon :
5000Vrms
Pwopòsyon Transfè Kouran (Min) :
1000% @ 1mA
Pwopòsyon aktyèl transfè (Max) :
-
Vire sou / Vire Off Tan (Tip) :
50µs, 15µs
Rise / Fall Time (Tip) :
40µs, 15µs
Kalite Sòti :
Darlington with Base
Voltage - Sòti (Max) :
300V
Kouran - Sòti / Chèn :
150mA
Voltage - Forward (Vf) (Tip) :
1.15V
Kouran - DC Forward (Si) (Max) :
60mA
Vce saturation (Max) :
1.2V
Operating Tanperati :
-55°C ~ 100°C
Mounting Kalite :
Through Hole
Pake / Ka :
6-DIP (0.300", 7.62mm)
Pake Aparèy Founisè :
6-DIP