Manifakti :
ON Semiconductor
Deskripsyon :
IC PREDRIVER IGBT IGNITION 8DIP
Kondwi konte genyen :
Low-Side
Kalite Gate :
IGBT, N-Channel MOSFET
Voltage - Pwovizyon pou :
7V ~ 10V
Vòltaj lojik - VIL, VIH :
-
Kouran - Peak Sòti (Sous, Lavabo) :
-
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
-
Rise / Fall Time (Tip) :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
8-DIP (0.300", 7.62mm)
Pake Aparèy Founisè :
8-PDIP