Vishay Semiconductor Diodes Division - UH6PDHM3_A/H

KEY Part #: K6442315

[3176PC Stock]


    Nimewo Pati:
    UH6PDHM3_A/H
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE GEN PURP 200V 6A TO277A. Rectifiers 6A,200V, SMPC, SM Ultrafast Rectifier
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur and Diodes - Rèkteur - Arrays ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division UH6PDHM3_A/H electronic components. UH6PDHM3_A/H can be shipped within 24 hours after order. If you have any demands for UH6PDHM3_A/H, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    UH6PDHM3_A/H Atribi pwodwi yo

    Nimewo Pati : UH6PDHM3_A/H
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE GEN PURP 200V 6A TO277A
    Seri : Automotive, AEC-Q101
    Estati Pati : Obsolete
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 200V
    Kouran - Mwayèn Rèktifye (Io) : 6A
    Voltage - Forward (Vf) (Max) @ Si : 1.05V @ 6A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 25ns
    Kouran - Fèy Reverse @ Vr : 10µA @ 200V
    Kapasite @ Vr, F : 80pF @ 4V, 1MHz
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-277, 3-PowerDFN
    Pake Aparèy Founisè : TO-277A (SMPC)
    Operating Tanperati - Junction : -55°C ~ 175°C

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