VBT1080S-E3/4W Pricing (USD) [242912PC Stock]
- 1 pcs$0.16068
- 2,000 pcs$0.15988
- Nimewo Pati:
- VBT1080S-E3/4W
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE SCHOTTKY 10A 80V TO-263AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division VBT1080S-E3/4W electronic components. VBT1080S-E3/4W can be shipped within 24 hours after order. If you have any demands for VBT1080S-E3/4W, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VBT1080S-E3/4W Atribi pwodwi yo
Nimewo Pati :
VBT1080S-E3/4W
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE SCHOTTKY 10A 80V TO-263AB
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
80V
Kouran - Mwayèn Rèktifye (Io) :
10A
Voltage - Forward (Vf) (Max) @ Si :
810mV @ 10A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
600µA @ 80V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AB
Operating Tanperati - Junction :
-55°C ~ 150°C
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