[2737PC Stock]
- Nimewo Pati:
- MBRB10H35HE3/81
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE SCHOTTKY 35V 10A TO263AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays, Diodes - RF, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division MBRB10H35HE3/81 electronic components. MBRB10H35HE3/81 can be shipped within 24 hours after order. If you have any demands for MBRB10H35HE3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MBRB10H35HE3/81 Atribi pwodwi yo
Nimewo Pati :
MBRB10H35HE3/81
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE SCHOTTKY 35V 10A TO263AB
Seri :
Automotive, AEC-Q101
Estati Pati :
Obsolete
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
35V
Kouran - Mwayèn Rèktifye (Io) :
10A
Voltage - Forward (Vf) (Max) @ Si :
850mV @ 20A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
100µA @ 35V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AB
Operating Tanperati - Junction :
-65°C ~ 175°C
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