STMicroelectronics - STGW15M120DF3

KEY Part #: K6422339

STGW15M120DF3 Pricing (USD) [18376PC Stock]

  • 1 pcs$2.24272
  • 600 pcs$2.00827

Nimewo Pati:
STGW15M120DF3
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 1200V 30A 259W.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGW15M120DF3 electronic components. STGW15M120DF3 can be shipped within 24 hours after order. If you have any demands for STGW15M120DF3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGW15M120DF3 Atribi pwodwi yo

Nimewo Pati : STGW15M120DF3
Manifakti : STMicroelectronics
Deskripsyon : IGBT 1200V 30A 259W
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 30A
Kouran - Pèseptè batman (Icm) : 60A
Vce (sou) (Max) @ Vge, Ic : 2.3V @ 15V, 15A
Pouvwa - Max : 259W
Oblije chanje enèji : 550µJ (on), 850µJ (off)
Kalite Antre : Standard
Gate chaje : 226nC
Td (on / off) @ 25 ° C : 26ns/122ns
Kondisyon egzamen an : 600V, 15A, 22 Ohm, 15V
Ranvèse Tan Reverse (trr) : 270ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247