STGW15M120DF3 Pricing (USD) [18376PC Stock]
- 1 pcs$2.24272
- 600 pcs$2.00827
- Nimewo Pati:
- STGW15M120DF3
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- IGBT 1200V 30A 259W.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGW15M120DF3 electronic components. STGW15M120DF3 can be shipped within 24 hours after order. If you have any demands for STGW15M120DF3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGW15M120DF3 Atribi pwodwi yo
Nimewo Pati :
STGW15M120DF3
Manifakti :
STMicroelectronics
Deskripsyon :
IGBT 1200V 30A 259W
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
30A
Kouran - Pèseptè batman (Icm) :
60A
Vce (sou) (Max) @ Vge, Ic :
2.3V @ 15V, 15A
Pouvwa - Max :
259W
Oblije chanje enèji :
550µJ (on), 850µJ (off)
Kalite Antre :
Standard
Gate chaje :
226nC
Td (on / off) @ 25 ° C :
26ns/122ns
Kondisyon egzamen an :
600V, 15A, 22 Ohm, 15V
Ranvèse Tan Reverse (trr) :
270ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247
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