Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
PB-F ESC VARICAP DIODE HF IR
Kapasite @ Vr, F :
6.5pF @ 10V, 1MHz
Kondisyon Pwopòsyon kapasite :
C2/C10
Voltage - Peak Ranvèse (Max) :
15V
Operating Tanperati :
125°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SC-79, SOD-523
Pake Aparèy Founisè :
ESC