Vishay Semiconductor Diodes Division - UGB8HTHE3/45

KEY Part #: K6456433

UGB8HTHE3/45 Pricing (USD) [115017PC Stock]

  • 1 pcs$0.32158
  • 1,000 pcs$0.29277

Nimewo Pati:
UGB8HTHE3/45
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 500V 8A TO263AB. Rectifiers 8.0A 500 Volt 25ns Dual 65 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division UGB8HTHE3/45 electronic components. UGB8HTHE3/45 can be shipped within 24 hours after order. If you have any demands for UGB8HTHE3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UGB8HTHE3/45 Atribi pwodwi yo

Nimewo Pati : UGB8HTHE3/45
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 500V 8A TO263AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 500V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 1.75V @ 8A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 30µA @ 500V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB
Operating Tanperati - Junction : -55°C ~ 150°C

Ou ka enterese tou
  • FYV0704SMTF

    ON Semiconductor

    DIODE SCHOTTKY 40V 750MA SOT23-3.

  • SL03-GS08

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 30V 1.1A DO219AB. Schottky Diodes & Rectifiers 1.1A .395V

  • FESB8DTHE3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 8A TO263AB. Rectifiers 200 Volt 8.0A 35ns Single

  • BYWB29-100HE3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 8A TO263AB. Rectifiers 100 Volt 8.0A 25ns Single Glass Pass

  • BYWB29-200HE3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 8A TO263AB. Rectifiers 200 Volt 8.0A 25ns Single Glass Pass

  • BYWB29-50HE3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 8A TO263AB. Rectifiers 50 Volt 8.0A 25ns Single Glass Pass