S2BHE3_A/I Pricing (USD) [833970PC Stock]
- 1 pcs$0.04435
- 6,400 pcs$0.04055
- Nimewo Pati:
- S2BHE3_A/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 100V 1.5A DO214AA. Rectifiers 1.5A, 100V, SMB GPP, STD, SM RECT
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Diodes - RF and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division S2BHE3_A/I electronic components. S2BHE3_A/I can be shipped within 24 hours after order. If you have any demands for S2BHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
S2BHE3_A/I Atribi pwodwi yo
Nimewo Pati :
S2BHE3_A/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 1.5A DO214AA
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
1.5A
Voltage - Forward (Vf) (Max) @ Si :
1.15V @ 1.5A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
2µs
Kouran - Fèy Reverse @ Vr :
1µA @ 100V
Kapasite @ Vr, F :
16pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AA, SMB
Pake Aparèy Founisè :
DO-214AA (SMB)
Operating Tanperati - Junction :
-55°C ~ 150°C
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