DMT6009LCT Pricing (USD) [92595PC Stock]
- 1 pcs$0.40138
- 50 pcs$0.30454
- 100 pcs$0.26649
- 500 pcs$0.20665
- 1,000 pcs$0.16314
- Nimewo Pati:
- DMT6009LCT
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CHA 60V 37.2A TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - JFETs, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMT6009LCT electronic components. DMT6009LCT can be shipped within 24 hours after order. If you have any demands for DMT6009LCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT6009LCT Atribi pwodwi yo
Nimewo Pati :
DMT6009LCT
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CHA 60V 37.2A TO220AB
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
37.2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
12 mOhm @ 13.5A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
33.5nC @ 10V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
1925pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.2W (Ta), 25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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