[1583PC Stock]
- Nimewo Pati:
- RS3DHE3/9AT
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 200V 3A DO214AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division RS3DHE3/9AT electronic components. RS3DHE3/9AT can be shipped within 24 hours after order. If you have any demands for RS3DHE3/9AT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS3DHE3/9AT Atribi pwodwi yo
Nimewo Pati :
RS3DHE3/9AT
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 200V 3A DO214AB
Seri :
-
Estati Pati :
Obsolete
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
3A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 2.5A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
150ns
Kouran - Fèy Reverse @ Vr :
10µA @ 200V
Kapasite @ Vr, F :
44pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AB, SMC
Pake Aparèy Founisè :
DO-214AB (SMC)
Operating Tanperati - Junction :
-55°C ~ 150°C
Dènye nouvèl
Ou ka enterese tou
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VS-8EWX06FN-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 8A TO252. Rectifiers 8A 600V 15ns Hyperfast
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