Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Sikwi entegre Integrated (IC)
  4. Memwa
  5. AS4C16M32MD1-5BIN

Alliance Memory, Inc. - AS4C16M32MD1-5BIN

KEY Part #: K939525

AS4C16M32MD1-5BIN Pricing (USD) [25392PC Stock]

  • 1 pcs$1.81369
  • 240 pcs$1.80467
Nimewo Pati:
AS4C16M32MD1-5BIN
Manifakti:
Alliance Memory, Inc.
Detaye deskripsyon:
IC DRAM 512M PARALLEL 90FBGA. DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Memwa, Entèfas - CODECs, Akizisyon Done - Analog pou Digital Convertisseurs, Entèfas - Modèm - ICs ak Modil, Done akizisyon - dijital konvètisè analog (DAC), Lineyè - Anplifikatè - Instrumentation, OP Amps, A, Memwa - konfigirasyon bal fen pou FPGAs and Clock / Distribisyon - Tanpon revèy, chofè yo ...
Avantaj konpetitif:
We specialize in Alliance Memory, Inc. AS4C16M32MD1-5BIN electronic components. AS4C16M32MD1-5BIN can be shipped within 24 hours after order. If you have any demands for AS4C16M32MD1-5BIN, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C16M32MD1-5BIN Atribi pwodwi yo

Nimewo Pati : AS4C16M32MD1-5BIN
Manifakti : Alliance Memory, Inc.
Deskripsyon : IC DRAM 512M PARALLEL 90FBGA
Seri : -
Estati Pati : Active
Kalite memwa yo : Volatile
Fòma memwa : DRAM
Teknoloji : SDRAM - Mobile LPDDR
Size memwa : 512Mb (16M x 32)
Frè frekans lan : 200MHz
Ekri Sik Tan - Pawòl, Page : 15ns
Tan aksè : 5ns
Entèfas memwa : Parallel
Voltage - Pwovizyon pou : 1.7V ~ 1.95V
Operating Tanperati : -40°C ~ 85°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 90-VFBGA
Pake Aparèy Founisè : 90-FBGA (8x13)

Dènye nouvèl

Alliance Memory Low-Power DDR2 SDRAM
Alliance Memory Low Power CMOS SRAM
Alliance Memory MT41x DDR3 SDRAMs
Ou ka enterese tou
  • CAV25M01YE-GT3

    ON Semiconductor

    IC EEPROM 1M SPI 10MHZ 8TSSOP. EEPROM 1 Mb SPI Serial CMOS EEPROM

  • MR45V256AMAZAAT-L

    Rohm Semiconductor

    IC FRAM 256K SPI 15MHZ 8SOP. F-RAM 256K; SPI; 3.3V FeRAM 15MHz

  • CY7C199D-25SXE

    Cypress Semiconductor Corp

    IC SRAM 256K PARALLEL 28SOIC. SRAM 256Kb 25ns 32K x 8 SRAM

  • 6116LA20TPGI

    IDT, Integrated Device Technology Inc

    IC SRAM 16K PARALLEL 24DIP. SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM

  • AS8C401801-QC166N

    Alliance Memory, Inc.

    IC SRAM 4M PARALLEL 100TQFP. SRAM 4M, 3.3V, 166MHz 256K x 18 Synch SRAM

  • AS8C401825-QC75N

    Alliance Memory, Inc.

    IC SRAM 4M PARALLEL 100TQFP. SRAM 4M, 3.3V, 7.5ns 256K x 18 Synch SRAM

Pati cho