Nimewo Pati :
EC3A04B-3-TL-H
Manifakti :
ON Semiconductor
Deskripsyon :
JFET N-CH 10MA 100MW ECSP1006-3
Vòltaj - Dekonpozisyon (V (BR) GSS) :
-
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj (Idss) @ Vds (Vgs = 0) :
1.2mA @ 10V
Kouran Drenaj (Id) - Max :
10mA
Voltage - Cutoff (VGS koupe) @ Id :
180mV @ 1µA
Antre kapasite (Ciss) (Max) @ Vds :
4pF @ 10V
Rezistans - RDS (Sou) :
200 Ohms
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
3-ECSP1006