2SK3666-2-TB-E Pricing (USD) [1080797PC Stock]
- 1 pcs$0.03821
- 3,000 pcs$0.03802
- Nimewo Pati:
- 2SK3666-2-TB-E
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- JFET NCH 30V 200MW 3CP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor 2SK3666-2-TB-E electronic components. 2SK3666-2-TB-E can be shipped within 24 hours after order. If you have any demands for 2SK3666-2-TB-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK3666-2-TB-E Atribi pwodwi yo
Nimewo Pati :
2SK3666-2-TB-E
Manifakti :
ON Semiconductor
Deskripsyon :
JFET NCH 30V 200MW 3CP
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Vòltaj - Dekonpozisyon (V (BR) GSS) :
-
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj (Idss) @ Vds (Vgs = 0) :
600µA @ 10V
Kouran Drenaj (Id) - Max :
10mA
Voltage - Cutoff (VGS koupe) @ Id :
180mV @ 1µA
Antre kapasite (Ciss) (Max) @ Vds :
4pF @ 10V
Rezistans - RDS (Sou) :
200 Ohms
Pouvwa - Max :
200mW
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè :
3-CP
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