1N4150W-HE3-08 Pricing (USD) [2033073PC Stock]
- 1 pcs$0.01920
- 3,000 pcs$0.01910
- 6,000 pcs$0.01661
- 15,000 pcs$0.01412
- 30,000 pcs$0.01329
- 75,000 pcs$0.01246
- 150,000 pcs$0.01107
- Nimewo Pati:
- 1N4150W-HE3-08
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division 1N4150W-HE3-08 electronic components. 1N4150W-HE3-08 can be shipped within 24 hours after order. If you have any demands for 1N4150W-HE3-08, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N4150W-HE3-08 Atribi pwodwi yo
Nimewo Pati :
1N4150W-HE3-08
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 50V 200MA SOD123
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
50V
Kouran - Mwayèn Rèktifye (Io) :
200mA
Voltage - Forward (Vf) (Max) @ Si :
1V @ 200mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
4ns
Kouran - Fèy Reverse @ Vr :
100nA @ 50V
Kapasite @ Vr, F :
2.5pF @ 0V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
SOD-123
Pake Aparèy Founisè :
SOD-123
Operating Tanperati - Junction :
-55°C ~ 150°C
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