Toshiba Semiconductor and Storage - 6N139(F)

KEY Part #: K7017632

6N139(F) Pricing (USD) [66326PC Stock]

  • 1 pcs$0.58952
  • 10 pcs$0.47831
  • 50 pcs$0.34804
  • 100 pcs$0.31324
  • 250 pcs$0.27843
  • 500 pcs$0.23667

Nimewo Pati:
6N139(F)
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
OPTOISO 2.5KV DARL W/BASE 8DIP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Izolan dijital, Objektif espesyal, Optoisolators - Tranzistò, Sòti fotovoltaik, Optoisolators - Sòti lojik, Isolators - Chofè Gate and Optoisolators - Triac, SCR Sòti ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage 6N139(F) electronic components. 6N139(F) can be shipped within 24 hours after order. If you have any demands for 6N139(F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

6N139(F) Atribi pwodwi yo

Nimewo Pati : 6N139(F)
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : OPTOISO 2.5KV DARL W/BASE 8DIP
Seri : -
Estati Pati : Obsolete
Kantite chanèl yo : 1
Voltage - Izolasyon : 2500Vrms
Pwopòsyon Transfè Kouran (Min) : 500% @ 1.6mA
Pwopòsyon aktyèl transfè (Max) : -
Vire sou / Vire Off Tan (Tip) : 200ns, 1µs
Rise / Fall Time (Tip) : -
Kalite Antre : DC
Kalite Sòti : Darlington with Base
Voltage - Sòti (Max) : 18V
Kouran - Sòti / Chèn : 60mA
Voltage - Forward (Vf) (Tip) : 1.65V
Kouran - DC Forward (Si) (Max) : 20mA
Vce saturation (Max) : -
Operating Tanperati : 0°C ~ 70°C
Mounting Kalite : Through Hole
Pake / Ka : 8-DIP (0.300", 7.62mm)
Pake Aparèy Founisè : 8-DIP

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