Manifakti :
STMicroelectronics
Deskripsyon :
DIODE GEN PURP 600V 20A DOP3I
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
20A
Voltage - Forward (Vf) (Max) @ Si :
1.75V @ 20A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
60ns
Kouran - Fèy Reverse @ Vr :
100µA @ 600V
Mounting Kalite :
Through Hole
Pake / Ka :
DOP3I-2 Insulated (Straight Leads)
Pake Aparèy Founisè :
DOP3I
Operating Tanperati - Junction :
150°C (Max)