Vishay Semiconductor Diodes Division - S2DHE3_A/I

KEY Part #: K6426996

S2DHE3_A/I Pricing (USD) [833970PC Stock]

  • 1 pcs$0.04435
  • 6,400 pcs$0.04055

Nimewo Pati:
S2DHE3_A/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 1.5A DO214AA. Rectifiers 1.5A, 200V, SMB GPP, STD, SM RECT
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division S2DHE3_A/I electronic components. S2DHE3_A/I can be shipped within 24 hours after order. If you have any demands for S2DHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S2DHE3_A/I Atribi pwodwi yo

Nimewo Pati : S2DHE3_A/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 1.5A DO214AA
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ Si : 1.15V @ 1.5A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2µs
Kouran - Fèy Reverse @ Vr : 1µA @ 200V
Kapasite @ Vr, F : 16pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -55°C ~ 150°C

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