Infineon Technologies - DD1200S12H4HOSA1

KEY Part #: K6533610

DD1200S12H4HOSA1 Pricing (USD) [143PC Stock]

  • 1 pcs$322.90157

Nimewo Pati:
DD1200S12H4HOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOD DIODE 1200A IHMB130-2.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Diodes - Zener - Single, Diodes - RF, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies DD1200S12H4HOSA1 electronic components. DD1200S12H4HOSA1 can be shipped within 24 hours after order. If you have any demands for DD1200S12H4HOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DD1200S12H4HOSA1 Atribi pwodwi yo

Nimewo Pati : DD1200S12H4HOSA1
Manifakti : Infineon Technologies
Deskripsyon : MOD DIODE 1200A IHMB130-2
Seri : -
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : 2 Independent
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 1200A
Pouvwa - Max : 1200000W
Vce (sou) (Max) @ Vge, Ic : 2.35V @ 15V, 1200A
Kouran - Cutoff Pèseptè (Max) : -
Antre kapasite (Cies) @ Vce : -
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module

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