Vishay Semiconductor Diodes Division - BYWB29-100-E3/81

KEY Part #: K6456376

BYWB29-100-E3/81 Pricing (USD) [108544PC Stock]

  • 1 pcs$0.34076
  • 800 pcs$0.31916

Nimewo Pati:
BYWB29-100-E3/81
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 8A TO263AB. Rectifiers 8.0 Amp 100 Volt
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYWB29-100-E3/81 electronic components. BYWB29-100-E3/81 can be shipped within 24 hours after order. If you have any demands for BYWB29-100-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYWB29-100-E3/81 Atribi pwodwi yo

Nimewo Pati : BYWB29-100-E3/81
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 8A TO263AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 20A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 25ns
Kouran - Fèy Reverse @ Vr : 10µA @ 100V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB
Operating Tanperati - Junction : -65°C ~ 150°C

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