Infineon Technologies - BAS1603WE6327HTSA1

KEY Part #: K6456018

BAS1603WE6327HTSA1 Pricing (USD) [2487272PC Stock]

  • 1 pcs$0.01487
  • 3,000 pcs$0.01483
  • 6,000 pcs$0.01337
  • 15,000 pcs$0.01163
  • 30,000 pcs$0.01046
  • 75,000 pcs$0.00930
  • 150,000 pcs$0.00775

Nimewo Pati:
BAS1603WE6327HTSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
DIODE GEN PURP 80V 250MA SOD323. Diodes - General Purpose, Power, Switching Silicon Switch Diode
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Infineon Technologies BAS1603WE6327HTSA1 electronic components. BAS1603WE6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BAS1603WE6327HTSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS1603WE6327HTSA1 Atribi pwodwi yo

Nimewo Pati : BAS1603WE6327HTSA1
Manifakti : Infineon Technologies
Deskripsyon : DIODE GEN PURP 80V 250MA SOD323
Seri : -
Estati Pati : Last Time Buy
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 80V
Kouran - Mwayèn Rèktifye (Io) : 250mA (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 150mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 4ns
Kouran - Fèy Reverse @ Vr : 1µA @ 75V
Kapasite @ Vr, F : 2pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SC-76, SOD-323
Pake Aparèy Founisè : PG-SOD323-2
Operating Tanperati - Junction : 150°C (Max)

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