Vishay Semiconductor Diodes Division - GP30DLHE3/72

KEY Part #: K6443880

[2641PC Stock]


    Nimewo Pati:
    GP30DLHE3/72
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE GEN PURP 200V 3A.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - RF ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division GP30DLHE3/72 electronic components. GP30DLHE3/72 can be shipped within 24 hours after order. If you have any demands for GP30DLHE3/72, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GP30DLHE3/72 Atribi pwodwi yo

    Nimewo Pati : GP30DLHE3/72
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE GEN PURP 200V 3A
    Seri : Automotive, AEC-Q101
    Estati Pati : Obsolete
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 200V
    Kouran - Mwayèn Rèktifye (Io) : 3A
    Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 3A
    Vitès : Standard Recovery >500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 5µs
    Kouran - Fèy Reverse @ Vr : 5µA @ 200V
    Kapasite @ Vr, F : 40pF @ 4V, 1MHz
    Mounting Kalite : Through Hole
    Pake / Ka : DO-201AD, Axial
    Pake Aparèy Founisè : DO-201AD
    Operating Tanperati - Junction : -65°C ~ 175°C

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