Nimewo Pati :
GB10SLT12-247D
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE SCHOTTKY 1.2KV 12A TO247D
Konfigirasyon dyòd :
1 Pair Common Cathode
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) :
12A
Voltage - Forward (Vf) (Max) @ Si :
1.9V @ 5A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
50µA @ 1200V
Operating Tanperati - Junction :
-55°C ~ 175°C
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247