Infineon Technologies - IGW25T120FKSA1

KEY Part #: K6422809

IGW25T120FKSA1 Pricing (USD) [14915PC Stock]

  • 1 pcs$2.76319

Nimewo Pati:
IGW25T120FKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 1200V 50A 190W TO247-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in Infineon Technologies IGW25T120FKSA1 electronic components. IGW25T120FKSA1 can be shipped within 24 hours after order. If you have any demands for IGW25T120FKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IGW25T120FKSA1 Atribi pwodwi yo

Nimewo Pati : IGW25T120FKSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 1200V 50A 190W TO247-3
Seri : TrenchStop®
Estati Pati : Active
Kalite IGBT : NPT, Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 50A
Kouran - Pèseptè batman (Icm) : 75A
Vce (sou) (Max) @ Vge, Ic : 2.2V @ 15V, 25A
Pouvwa - Max : 190W
Oblije chanje enèji : 4.2mJ
Kalite Antre : Standard
Gate chaje : 155nC
Td (on / off) @ 25 ° C : 50ns/560ns
Kondisyon egzamen an : 600V, 25A, 22 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : PG-TO247-3