Vishay Semiconductor Diodes Division - BZT52C6V8-G3-08

KEY Part #: K6499913

BZT52C6V8-G3-08 Pricing (USD) [2308031PC Stock]

  • 1 pcs$0.01603
  • 15,000 pcs$0.01526

Nimewo Pati:
BZT52C6V8-G3-08
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE ZENER 6.8V 410MW SOD123.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BZT52C6V8-G3-08 electronic components. BZT52C6V8-G3-08 can be shipped within 24 hours after order. If you have any demands for BZT52C6V8-G3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BZT52C6V8-G3-08 Atribi pwodwi yo

Nimewo Pati : BZT52C6V8-G3-08
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE ZENER 6.8V 410MW SOD123
Seri : Automotive, AEC-Q101
Estati Pati : Active
Voltage - Zener (Nom) (Vz) : 6.8V
Tolerans : ±5%
Pouvwa - Max : 410mW
Enpedans (Max) (Zzt) : 4.5 Ohms
Kouran - Fèy Reverse @ Vr : 100nA @ 3V
Voltage - Forward (Vf) (Max) @ Si : -
Operating Tanperati : -55°C ~ 150°C
Mounting Kalite : Surface Mount
Pake / Ka : SOD-123
Pake Aparèy Founisè : SOD-123

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