Vishay Semiconductor Diodes Division - EGF1T-E3/67A

KEY Part #: K6457365

EGF1T-E3/67A Pricing (USD) [462678PC Stock]

  • 1 pcs$0.08436
  • 1,500 pcs$0.08394
  • 3,000 pcs$0.07653
  • 7,500 pcs$0.07160
  • 10,500 pcs$0.06666

Nimewo Pati:
EGF1T-E3/67A
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 1.3KV 1A DO214BA. Rectifiers 1.0 Amp 1300 Volt
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division EGF1T-E3/67A electronic components. EGF1T-E3/67A can be shipped within 24 hours after order. If you have any demands for EGF1T-E3/67A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGF1T-E3/67A Atribi pwodwi yo

Nimewo Pati : EGF1T-E3/67A
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1.3KV 1A DO214BA
Seri : SUPERECTIFIER®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1300V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 3V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 75ns
Kouran - Fèy Reverse @ Vr : 5µA @ 1300V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214BA
Pake Aparèy Founisè : DO-214BA (GF1)
Operating Tanperati - Junction : -55°C ~ 150°C

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