1N8032-GA Pricing (USD) [485PC Stock]
- 1 pcs$90.29152
- 10 pcs$85.93157
- 25 pcs$82.81821
- Nimewo Pati:
- 1N8032-GA
- Manifakti:
- GeneSiC Semiconductor
- Detaye deskripsyon:
- DIODE SCHOTTKY 650V 2.5A TO257.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Tiristors - SCR, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in GeneSiC Semiconductor 1N8032-GA electronic components. 1N8032-GA can be shipped within 24 hours after order. If you have any demands for 1N8032-GA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N8032-GA Atribi pwodwi yo
Nimewo Pati :
1N8032-GA
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE SCHOTTKY 650V 2.5A TO257
Seri :
-
Estati Pati :
Obsolete
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) :
2.5A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 2.5A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
5µA @ 650V
Kapasite @ Vr, F :
274pF @ 1V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
TO-257-3
Pake Aparèy Founisè :
TO-257
Operating Tanperati - Junction :
-55°C ~ 250°C
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