NXP USA Inc. - BAP1321LX,315

KEY Part #: K6465318

[9533PC Stock]


    Nimewo Pati:
    BAP1321LX,315
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    RF DIODE PIN 60V 130MW 2DFN.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - RF, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. BAP1321LX,315 electronic components. BAP1321LX,315 can be shipped within 24 hours after order. If you have any demands for BAP1321LX,315, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BAP1321LX,315 Atribi pwodwi yo

    Nimewo Pati : BAP1321LX,315
    Manifakti : NXP USA Inc.
    Deskripsyon : RF DIODE PIN 60V 130MW 2DFN
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : PIN - Single
    Voltage - Peak Ranvèse (Max) : 60V
    Kouran - Max : 100mA
    Kapasite @ Vr, F : 0.28pF @ 20V, 1MHz
    Rezistans @ Si, F : 1.3 Ohm @ 100mA, 100MHz
    Disipasyon Pouvwa (Max) : 130mW
    Operating Tanperati : -65°C ~ 150°C (TJ)
    Pake / Ka : 2-XDFN
    Pake Aparèy Founisè : 2-DFN1006D (0.6x1.0)