IPT111N20NFDATMA1 Pricing (USD) [22406PC Stock]
- 1 pcs$1.83937
- 2,000 pcs$1.68749
- Nimewo Pati:
- IPT111N20NFDATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 200V 96A HSOF-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPT111N20NFDATMA1 electronic components. IPT111N20NFDATMA1 can be shipped within 24 hours after order. If you have any demands for IPT111N20NFDATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPT111N20NFDATMA1 Atribi pwodwi yo
Nimewo Pati :
IPT111N20NFDATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 200V 96A HSOF-8
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
96A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
11.1 mOhm @ 96A, 10V
Vgs (th) (Max) @ Id :
4V @ 267µA
Chaje Gate (Qg) (Max) @ Vgs :
87nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7000pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
375W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-HSOF-8-1
Pake / Ka :
8-PowerSFN
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