Vishay Semiconductor Diodes Division - BYS10-35HE3_A/H

KEY Part #: K6455118

BYS10-35HE3_A/H Pricing (USD) [931951PC Stock]

  • 1 pcs$0.03969

Nimewo Pati:
BYS10-35HE3_A/H
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 35V 1A DO214AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - RF, Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYS10-35HE3_A/H electronic components. BYS10-35HE3_A/H can be shipped within 24 hours after order. If you have any demands for BYS10-35HE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYS10-35HE3_A/H Atribi pwodwi yo

Nimewo Pati : BYS10-35HE3_A/H
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 35V 1A DO214AC
Seri : Automotive, AEC-Q100
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 35V
Kouran - Mwayèn Rèktifye (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ Si : 500mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 500µA @ 35V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AC, SMA
Pake Aparèy Founisè : SMA (DO-214AC)
Operating Tanperati - Junction : -65°C ~ 150°C

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