Nimewo Pati :
RN2710JE(TE85L,F)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
TRANS 2PNP PREBIAS 0.1W ESV
Kalite tranzistò :
2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Kouran - Pèseptè (Ic) (Max) :
100mA
Voltage - Pèseptè ki emèt deba (Max) :
50V
Rezistans - Sèvi (R1) :
4.7 kOhms
Rezistans - Sèvi ak emeteur (R2) :
-
DC Kouran Akeri (HFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Kouran - Cutoff Pèseptè (Max) :
100nA (ICBO)
Frekans - Tranzisyon :
200MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
ESV