Infineon Technologies - DF80R12W2H3FB11BPSA1

KEY Part #: K6534554

DF80R12W2H3FB11BPSA1 Pricing (USD) [1273PC Stock]

  • 1 pcs$33.99664

Nimewo Pati:
DF80R12W2H3FB11BPSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOD DIODE BRIDGE EASY1B-2-1.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Infineon Technologies DF80R12W2H3FB11BPSA1 electronic components. DF80R12W2H3FB11BPSA1 can be shipped within 24 hours after order. If you have any demands for DF80R12W2H3FB11BPSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DF80R12W2H3FB11BPSA1 Atribi pwodwi yo

Nimewo Pati : DF80R12W2H3FB11BPSA1
Manifakti : Infineon Technologies
Deskripsyon : MOD DIODE BRIDGE EASY1B-2-1
Seri : EconoPACK™2
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Half Bridge
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 20A
Pouvwa - Max : 20mW
Vce (sou) (Max) @ Vge, Ic : 1.7V @ 15V, 20A
Kouran - Cutoff Pèseptè (Max) : 1mA
Antre kapasite (Cies) @ Vce : 2.35nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module