Nimewo Pati :
MBR8H100MFST1G
Manifakti :
ON Semiconductor
Deskripsyon :
DIODE SCHOTTKY 100V 8A 5DFN
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
900mV @ 8A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
2µA @ 100V
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerTDFN, 5 Leads
Pake Aparèy Founisè :
5-DFN (5x6) (8-SOFL)
Operating Tanperati - Junction :
-55°C ~ 175°C