IXYS - IXGR32N90B2D1

KEY Part #: K6422164

IXGR32N90B2D1 Pricing (USD) [7930PC Stock]

  • 1 pcs$5.47089
  • 30 pcs$5.44367

Nimewo Pati:
IXGR32N90B2D1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 900V 47A 160W ISOPLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Pwogramasyon Unijunction, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Modil pouvwa chofè and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXGR32N90B2D1 electronic components. IXGR32N90B2D1 can be shipped within 24 hours after order. If you have any demands for IXGR32N90B2D1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXGR32N90B2D1 Atribi pwodwi yo

Nimewo Pati : IXGR32N90B2D1
Manifakti : IXYS
Deskripsyon : IGBT 900V 47A 160W ISOPLUS247
Seri : HiPerFAST™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 900V
Kouran - Pèseptè (Ic) (Max) : 47A
Kouran - Pèseptè batman (Icm) : 200A
Vce (sou) (Max) @ Vge, Ic : 2.9V @ 15V, 32A
Pouvwa - Max : 160W
Oblije chanje enèji : 2.2mJ (off)
Kalite Antre : Standard
Gate chaje : 89nC
Td (on / off) @ 25 ° C : 20ns/260ns
Kondisyon egzamen an : 720V, 32A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) : 190ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : ISOPLUS247™
Pake Aparèy Founisè : ISOPLUS247™

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