Taiwan Semiconductor Corporation - SFA801GHC0G

KEY Part #: K6429779

SFA801GHC0G Pricing (USD) [293170PC Stock]

  • 1 pcs$0.12616

Nimewo Pati:
SFA801GHC0G
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE GEN PURP 50V 8A TO220AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur, Diodes - RF, Tiristors - SCR - Modil yo, Tiristors - TRIACs, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays and Tiristors - SCR ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SFA801GHC0G Atribi pwodwi yo

Nimewo Pati : SFA801GHC0G
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 50V 8A TO220AC
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 50V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 975mV @ 8A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 35ns
Kouran - Fèy Reverse @ Vr : 10µA @ 50V
Kapasite @ Vr, F : 100pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2
Pake Aparèy Founisè : TO-220AC
Operating Tanperati - Junction : -55°C ~ 150°C

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