Vishay Semiconductor Diodes Division - SS1FH10-M3/I

KEY Part #: K6432945

SS1FH10-M3/I Pricing (USD) [1172681PC Stock]

  • 1 pcs$0.03328
  • 30,000 pcs$0.03312

Nimewo Pati:
SS1FH10-M3/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 100V 1A DO-219AB. Schottky Diodes & Rectifiers If 1A Vrrm 100V DO-219AB Ifsm 40A
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division SS1FH10-M3/I electronic components. SS1FH10-M3/I can be shipped within 24 hours after order. If you have any demands for SS1FH10-M3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SS1FH10-M3/I Atribi pwodwi yo

Nimewo Pati : SS1FH10-M3/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 100V 1A DO-219AB
Seri : Automotive, AEC-Q101, eSMP®
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 800mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 5µA @ 100V
Kapasite @ Vr, F : 70pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-219AB
Pake Aparèy Founisè : DO-219AB (SMF)
Operating Tanperati - Junction : -55°C ~ 175°C

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