Vishay Semiconductor Diodes Division - GSIB6A60L-802E3/45

KEY Part #: K6540991

[12524PC Stock]


    Nimewo Pati:
    GSIB6A60L-802E3/45
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    BRIDGE RECT 1P 600V 2.8A GSIB-5S.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single and Tiristors - SCR ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division GSIB6A60L-802E3/45 electronic components. GSIB6A60L-802E3/45 can be shipped within 24 hours after order. If you have any demands for GSIB6A60L-802E3/45, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GSIB6A60L-802E3/45 Atribi pwodwi yo

    Nimewo Pati : GSIB6A60L-802E3/45
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : BRIDGE RECT 1P 600V 2.8A GSIB-5S
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : Single Phase
    Teknoloji : Standard
    Voltage - Peak Ranvèse (Max) : 600V
    Kouran - Mwayèn Rèktifye (Io) : 2.8A
    Voltage - Forward (Vf) (Max) @ Si : 1V @ 3A
    Kouran - Fèy Reverse @ Vr : 10µA @ 600V
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : 4-SIP, GSIB-5S
    Pake Aparèy Founisè : GSIB-5S

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