Nimewo Pati :
ESH3BHE3/57T
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 3A DO214AB
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
3A
Voltage - Forward (Vf) (Max) @ Si :
900mV @ 3A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
40ns
Kouran - Fèy Reverse @ Vr :
5µA @ 100V
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AB, SMC
Pake Aparèy Founisè :
DO-214AB (SMC)
Operating Tanperati - Junction :
-55°C ~ 175°C