Vishay Semiconductor Diodes Division - SE12DJHM3/I

KEY Part #: K6456741

SE12DJHM3/I Pricing (USD) [179296PC Stock]

  • 1 pcs$0.20629
  • 2,000 pcs$0.18604
  • 6,000 pcs$0.17718

Nimewo Pati:
SE12DJHM3/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 3.2A TO263AC. Rectifiers 12A 600V AEC-Q101 ESD Rectifr
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division SE12DJHM3/I electronic components. SE12DJHM3/I can be shipped within 24 hours after order. If you have any demands for SE12DJHM3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE12DJHM3/I Atribi pwodwi yo

Nimewo Pati : SE12DJHM3/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 3.2A TO263AC
Seri : Automotive, AEC-Q101, eSMP®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 3.2A
Voltage - Forward (Vf) (Max) @ Si : 1.15V @ 12A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 3µs
Kouran - Fèy Reverse @ Vr : 20µA @ 600V
Kapasite @ Vr, F : 90pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab) Variant
Pake Aparèy Founisè : TO-263AC (SMPD)
Operating Tanperati - Junction : -55°C ~ 175°C

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